IRFD214 -VI Not Specified 250V 0,57A/25°C 0,32A/100°C 2000mO , 1W/25°C Rthj=120°C/W
Description
250V 0,57A/25°C 0,32A/100°C 2000mO , 1W/25°C Rthj=120°C/W
The product with part number IRFD214 -VI (250V 0,57A/25°C 0,32A/100°C 2000mO , 1W/25°C Rthj=120°C/W)
is from company Not Specified. Minimal order quantity is 1 pc.
Marking manufacturer IRFD214PBF Type of casing: THT Case (shape): DIL- 4H Type of component: THT Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 250 [V] Idc max (Tc/Ta=25÷160°C) 0.4500 [A] Idc max (Tc/Ta=25°C) 0.45 [A] Idc max (Tc/Ta=100÷109°C) 0.29 [A] Pmax without heatsink ( TA=25°C) 1 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 2000 [mΩ] trr recovery time (@25°C) 190 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 8.2 [nC] Cin (Input Capacitance) 140 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 150 [°C] Rth-a (thermal resistance) 120 [°C/W] Packaging and weight: Unit: ks Packaging (Number of units): 100
Following Parts
Random Products
(keyword IRFD214 -VI Not Specified 250V 0,57A/25°C 0,32A/100°C 2000mO , 1W/25°C Rthj=120°C/W)
