IRFBG30 -VI Not Specified 1000V 3.1A/25°C 2A/100°C 5000mO *S , 125W/25°C Rthjc=1°C/W
Description
1000V 3.1A/25°C 2A/100°C 5000mO *S , 125W/25°C Rthjc=1°C/W
The product with part number IRFBG30 -VI (1000V 3.1A/25°C 2A/100°C 5000mO *S , 125W/25°C Rthjc=1°C/W)
is from company Not Specified and distributed with basic unit price 1,03 EUR. Minimal order quantity is 1 pc.
Marking manufacturer IRFBG30PBF Type of casing: THT Case (shape): TO-220AB Type of component: THT Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 1000 [V] Idc max (Tc/Ta=25÷160°C) 3.1000 [A] Idc max (Tc/Ta=25°C) 3.1 [A] Idc max (Tc/Ta=100÷109°C) 2 [A] Pmax with heatsink (TC=25°C) 125 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 5000 [mΩ] trr recovery time (@25°C) 410 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 80 [nC] Cin (Input Capacitance) 980 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 150 [°C] Rth-c (thermal resistance) 1 [°C/W] Rth-a (thermal resistance) 62 [°C/W] Packaging and weight: Unit: ks Weight: 2.3 [g] Packaging (Number of units): 50 nah_ekv STP3NK100Z &ST nah_1 STP3NK100Z
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