IRF620S -VI Not Specified 200V 5.2A/25°C 3.3A/100°C 0.8O , 50W/25°C Rthjc=2.5°C/W

Part Nnumber
IRF620S -VI
Description
200V 5.2A/25°C 3.3A/100°C 0.8O , 50W/25°C Rthjc=2.5°C/W
Producer
Not Specified
Basic price

The product with part number IRF620S -VI (200V 5.2A/25°C 3.3A/100°C 0.8O , 50W/25°C Rthjc=2.5°C/W) is from company Not Specified. Minimal order quantity is 1 pc.


Marking manufacturer IRF620SPBF Type of casing: SMD Case (shape): D2-Pak Type of component: SMD Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 200 [V] Idc max (Tc/Ta=25÷160°C) 5.2000 [A] Idc max (Tc/Ta=25°C) 5.2 [A] Idc max (Tc/Ta=100÷109°C) 3.3 [A] Pmax with heatsink (TC=25°C) 50 [W] Pmax without heatsink ( TA=25°C) 3 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 800 [mΩ] trr recovery time (@25°C) 150 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 14 [nC] Cin (Input Capacitance) 260 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 150 [°C] Packaging and weight: Unit: ks Packaging (Number of units): 50


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