IRF530N IR Not Specified 100V 15A/25°C 11A/100°C 110mO S , 63W/25°C Rthjc=2.4°C/W +D
Description
100V 15A/25°C 11A/100°C 110mO S , 63W/25°C Rthjc=2.4°C/W +D
The product with part number IRF530N IR (100V 15A/25°C 11A/100°C 110mO S , 63W/25°C Rthjc=2.4°C/W +D)
is from company Not Specified and distributed with basic unit price 0,50 EUR. Minimal order quantity is 1 pc.
Marking manufacturer IRF530N Type of casing: THT Case (shape): TO-220AB Type of component: THT Configuration: 1*Transistor RoHS no REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 100 [V] Idc max (Tc/Ta=25÷160°C) 17 [A] Idc max (Tc/Ta=25°C) 17 [A] Idc max (Tc/Ta=100÷109°C) 12 [A] Pmax with heatsink (TC=25°C) 70 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 90 [mΩ] trr recovery time (@25°C) 93 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 37 [nC] Cin (Input Capacitance) 920 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 175 [°C] Rth-c (thermal resistance) 2.15 [°C/W] Rth-a (thermal resistance) 62 [°C/W] Packaging and weight: Unit: ks Weight: 2.68 [g] Packaging (Number of units): 50
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