IRF520N -IR Not Specified 100V 9.5A/25°C 6.7A/100°C 200mO S , 47W/25°C Rthjc=3.2°C/W +D
Description
100V 9.5A/25°C 6.7A/100°C 200mO S , 47W/25°C Rthjc=3.2°C/W +D
The product with part number IRF520N -IR (100V 9.5A/25°C 6.7A/100°C 200mO S , 47W/25°C Rthjc=3.2°C/W +D)
is from company Not Specified and distributed with basic unit price 0,40 EUR. Minimal order quantity is 1 pc.
Marking manufacturer IRF520NPBF Type of casing: THT Case (shape): TO-220AB Type of component: THT Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 100 [V] Idc max (Tc/Ta=25÷160°C) 9.7000 [A] Idc max (Tc/Ta=25°C) 9.7 [A] Idc max (Tc/Ta=100÷109°C) 6.8 [A] Pmax with heatsink (TC=25°C) 48 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 200 [mΩ] trr recovery time (@25°C) 99 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 25 [nC] Cin (Input Capacitance) 330 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 175 [°C] Rth-c (thermal resistance) 3.1 [°C/W] Rth-a (thermal resistance) 62 [°C/W] Packaging and weight: Unit: ks Weight: 2.3 [g] Packaging (Number of units): 50
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